Chip Thyristor Kab
Chip Thyristor Kab
Chip thyristor sing diprodhuksi dening RUNAU Electronics wiwitane dikenalake kanthi standar lan teknologi pangolahan GE sing tundhuk karo standar aplikasi USA lan mumpuni dening klien ing saindenging jagad.Iku ditampilake ing karakteristik resistance lemes termal kuwat, urip dawa, voltase dhuwur, saiki gedhe, daya adaptasi lingkungan kuwat, etc. Ing 2010, RUNAU Electronics dikembangaké pola anyar chip thyristor kang digabungake kauntungan tradisional GE lan teknologi Eropah, kinerja lan efficiency padha optimized banget.
Parameter:
| Dhiameter mm | kekandelan mm | Tegangan V | Lawang Dia. mm | Katoda Inner Dia. mm | Cathode Out Dia. mm | Tjm ℃ |
| 25.4 | 1.5±0.1 | ≤2000 | 2.5 | 5.6 | 20.3 | 125 |
| 25.4 | 1.6-1.8 | 2200-3500 | 2.6 | 5.6 | 15.9 | 125 |
| 29.72 | 2±0.1 | ≤2000 | 3.3 | 7.7 | 24.5 | 125 |
| 32 | 2±0.1 | ≤2000 | 3.3 | 7.7 | 26.1 | 125 |
| 35 | 2±0.1 | ≤2000 | 3.8 | 7.6 | 29.1 | 125 |
| 35 | 2.1-2.4 | 2200-4200 | 3.8 | 7.6 | 24.9 | 125 |
| 38.1 | 2±0.1 | ≤2000 | 3.3 | 7.7 | 32.8 | 125 |
| 40 | 2±0.1 | ≤2000 | 3.3 | 7.7 | 33.9 | 125 |
| 40 | 2.1-2.4 | 2200-4200 | 3.5 | 8.1 | 30.7 | 125 |
| 45 | 2.3±0.1 | ≤2000 | 3.6 | 8.8 | 37.9 | 125 |
| 50.8 | 2.5±0.1 | ≤2000 | 3.6 | 8.8 | 43.3 | 125 |
| 50.8 | 2.6-2.9 | 2200-4200 | 3.8 | 8.6 | 41.5 | 125 |
| 50.8 | 2.6-2.8 | 2600-3500 | 3.3 | 7 | 41.5 | 125 |
| 55 | 2.5±0.1 | ≤2000 | 3.3 | 8.8 | 47.3 | 125 |
| 55 | 2.5-2.9 | ≤4200 | 3.8 | 8.6 | 45.7 | 125 |
| 60 | 2.6-3.0 | ≤4200 | 3.8 | 8.6 | 49.8 | 125 |
| 63.5 | 2.7-3.1 | ≤4200 | 3.8 | 8.6 | 53.4 | 125 |
| 70 | 3.0-3.4 | ≤4200 | 5.2 | 10.1 | 59.9 | 125 |
| 76 | 3.5-4.1 | ≤4800 | 5.2 | 10.1 | 65.1 | 125 |
| 89 | 4-4.4 | ≤4200 | 5.2 | 10.1 | 77.7 | 125 |
| 99 | 4.5-4.8 | ≤3500 | 5.2 | 10.1 | 87.7 | 125 |
Spesifikasi Teknis:
RUNAU Electronics nyedhiyakake chip semikonduktor daya saka thyristor sing dikontrol fase lan thyristor switch cepet.
1. Low ing negara voltase drop
2. Kekandelan lapisan aluminium luwih saka 10 microns
3. Mesa pangayoman lapisan pindho
Tips:
1. Supaya tetep kinerja sing luwih apik, chip bakal disimpen ing nitrogen utawa vakum kondisi kanggo nyegah owah-owahan voltase disebabake oksidasi lan asor bêsik molybdenum.
2. Tansah njaga permukaan chip sing resik, mangga nganggo sarung tangan lan aja ndemek chip kanthi tangan kosong
3. Operate kasebut kanthi teliti, ing proses nggunakake.Aja ngrusak permukaan pinggiran resin chip lan lapisan aluminium ing area kutub gerbang lan katoda
4. Ing test utawa enkapsulasi, Wigati dicathet menawa paralelisme, flatness lan clamp meksa peralatan kudu pas karo standar sing ditemtokake.Paralelisme sing ora apik bakal nyebabake tekanan sing ora rata lan karusakan chip kanthi kekuwatan.Yen keluwihan pasukan clamp dileksanakake, chip bakal gampang rusak.Yen pasukan clamp dileksanakake cilik banget, kontak miskin lan boros panas bakal mengaruhi aplikasi.
5. Blok tekanan ing kontak karo permukaan katoda chip kudu anil
Nyaranake Clamp Force
| Ukuran Kripik | Clamp Force Rekomendasi |
| （KN）±10% | |
| Φ25.4 | 4 |
| Φ30 utawa Φ30.48 | 10 |
| Φ35 | 13 |
| Φ38 utawa Φ40 | 15 |
| Φ50.8 | 24 |
| Φ55 | 26 |
| Φ60 | 28 |
| Φ63.5 | 30 |
| Φ70 | 32 |
| Φ76 | 35 |
| Φ85 | 45 |
| Φ99 | 65 |